RSB6.8CS

www.DataSheet4U.com RSB6.8CS Diodes ESD Protection diode RSB6.8CS zApplication ESD Protection, bi direction zExternal dimensions (Unit : mm) 0.16±0.05 0.6±0.05 zLand size figure (Unit : mm) 0.55 0.45 zFeatures 1) Ultra small mold type. (VMN2) 2) High reliability. 3) Bi chip-mounter, automatic mounting is possible. 0.156 0.35±0.1 0.9±0.05 1.0±0.05 VMN2 zStructure 0.37±0.03 zConstruction Silicon epitaxial planar ROHM : VMN2 dot (year week factory) + day zTaping specifications 4±0.1 2±0.05 φ1.55 0.2±0.05 1.75±0.1 3.5±0.05 0.45 1.1±0.05 φ0.5 0.7±0.05 2±0.05 4.0±0.1 0.52 zAbsolute maximum ratings (Ta=25°C) Parameter Peak pulse power (tp=10×1000us) Power dissipation Junction temperature Storage temperature Operating temperature Symbol Ppk P Tj Tstg Topor Limits 10 100 150 -55 to +150 -55 to +150 Unit W mW ℃ ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Zener voltage Reverse current Capacitance between terminals Symbol Vz IR Ct Min. 5.78 Typ. 15 Max. 7.82 0.5 Unit V µA pF Conditions IZ=1mA VR=3.5V VR=0V , f=1MHz 8.0±0.2 0.5 1/2 www.DataSheet4U.com RSB6.8CS Diodes zElectrical characteristic curves 1 10000 1000 Ta=150℃ Ta=125℃ 100 f=1MHz Ta=75℃ Ta=25℃ Ta=-25℃ REVERSE CURRENT:IR (nA) 0.1 10 1 0.1 0.01 0.001 0.01 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 0.001 0.0001 0.0001 0 1 2 3 4 5 6 7 ZENER VOLTAGE:Vz(mV) Vz-Iz CHARACTERISTICS 8 9 0.00001 0 0.5 1 1.5 2 2.5 3 3.5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1 0 0.5 1 1.5 2 2.5 3 3.5 REVERSE VOLTAGE:VR(V)...