RSE002N06

www.DataSheet4U.com 2.5V Drive Nch MOSFET RSE002N06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) EMT3 1.6 0.3 0.7 0.55 Features 1) High speed switing. 2) Small package(EMT3). 3) Low voltage drive(2.5V drive). (1)Source (2)Gate (3)Drain (3) 0.8 (2) (1) 1.6 0.2 0.5 0.5 1.0 0.2 0.15 Abbreviated symbol : RK  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RSE002N06 Taping TL 3000   Inner circuit (3) 0.1Min. ∗2 (2) ∗1  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Symbol VDSS VGSS Limits 60 20 250 Unit V V mA A mA A mW C C (1) Source (2) Gate (3) Drain (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 1 125 1 150 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 833 Unit C / W www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.01 - Rev.A RSE002N06 Electrical characteristics (Ta = 25C) Parameter Symbol Data Sheet www.DataSheet4U.com Min. 60 1.0 0.25 - Typ. 1.7 2.1 2.3 3.0 15 4.5 2.0 3.5 5 18 28 Max. 10 1 2.3 2.4 3.0 3.2 12.0 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, ...