RT1C060UN

www.DataSheet4U.com 1.5V Drive Nch MOSFET RT1C060UN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSST8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low voltage drive (1.5V drive). (1) (2) (3) (4) Abbreviated symbol : VB  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RT1C060UN Type Taping TR 3000   Inner circuit (8) (7) (6) (5) ∗2  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board. Symbol VDSS VGSS Limits 20 10 6 Unit V V A A A A W C C (1) Drain (2) Drain (3) Drain (4) Gate (5) Source (6) Drain (7) Drain (8) Drain ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 24 1 24 1.25 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a ceramic board. Symbol Rth (ch-a)* Limits 100 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.04 - Rev.A RT1C060UN  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse...