BC487

BC487, BC487B High Current Transistors NPN Silicon Features Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 60 Vdc 60 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD Derate above 25°C 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg − 55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER MARKING DIAGRAM 123 STRAIGHT LEAD BULK PACK TO−92 CASE 29 STYLE 17 1 2 3 BENT LEAD TAPE & REEL AMMO PACK BC48 7x AYWW G G BC487 A Y WW G = Device Code x = nothing or B = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D....