K3520PQ-XH

SEMICONDUCTOR TECHNICAL DATA General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. K3520PQ-XH www.DataSheet4U.com Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 S2 FEATURES ¡⁄ Low on-state resistance RDS(ON)1 = 16m¥ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m¥ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m¥ MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Unless otherwise noted) RATING 24 ¡ -55¡› 12 150 ¡ UNIT V V SYMBOL VDSS VGSS Tstg Equivalent Circuit D D G1 Rg G2 Rg S1 S2 2010. 4. 29 Revision No : 0 1/3 K3520PQ-XH Electrical Characteristics (Ta=25¡ CHARACTERISTIC Drain to Source Breakdown Voltage Gate to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage www.DataSheet4U.com Unless otherwise noted) SYMBOL V(BR)DSS V(BR)GSS IDSS IGSS Vth TEST CONDITION ID = 250¥ A, VGS = 0V IG = ¡ 100§¸ , VDS = 0V ¡ 0.5 VDS = 10V, VGS = 0V, f=1MHz VDD=10V, VGS=3.9V, IS=4.0A VGS = 0V, IS = 1.0A 0.50 MIN 24 12 ¡ ¡ 1.1 12.5 13.5 15.0 3.0 600 115 83 6.0 0.8 2.5 0.70 TYP 14 MAX 1.0 §¸ §¸ V m¥ m¥ m¥ k§ 10 1.5 16.0 17.0 20.0 0.86 V nC pF UNIT V V VDS = 24V, VGS = 0V VGS = ¡ 12V, VDS = 0V VDS=VGS, ID=250 A VGS = 4.5V, ID = 1.0A Drain to Source On Resistance RDS(on) ...