2SJ516
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
2SJ516
Chopper Regulator, DC−DC Converter an...
2SJ516
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (π−MOSV)
2SJ516
Chopper
Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.3 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −250 V) z Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
−250 −250 ±20 −6.5 −13
35
157
−6.5 3.5 150 −55 to 150
V V V A A W
mJ
A mJ °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliabili...