Document
2SJ516
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
2SJ516
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.3 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −250 V) z Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalenche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
−250 −250 ±20 −6.5 −13
35
157
−6.5 3.5 150 −55 to 150
V V V A A W
mJ
A mJ °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
3.57 °C / W 62.5 °C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 6.3 mH, RG = 25 Ω, IAR = −6.5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2009-09-29
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
Rise time
Symbol
Test Condition
IGSS IDSS
VGS = ±16 V, VDS = 0 V VDS = −250 V, VGS = 0 V
V (BR) DSS ID = −10 mA, VGS = 0 V
Vth RDS (ON)
|Yfs| Ciss Crss Coss
VDS = −10 V, ID = −1 mA VGS = −10 V, ID = −3 A VDS = −10 V, ID = −3 A
VDS = −10 V, VGS = 0 V, f = 1 MHz
tr
2SJ516
Min
— —
−250
−1.5 — 2.5 — — —
Typ.
— —
—
— 0.6 5.3 1120 110 320
Max
±10 −100
—
−3.5 0.8 — — — —
Unit μA μA V V Ω S
pF
— 17 —
Switching time
Turn−on time Fall time
ton tf
— 34 — ns
—6—
Turn−off time
toff
Total gate charge (Gate−source plus gate−drain)
Qg
Gate−source charge
Qgs VDD ≈ −200 V, VGS = −10 V, ID = −6.5 A
Gate−drain (“mill.