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J516 Dataheets PDF



Part Number J516
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SJ516
Datasheet J516 DatasheetJ516 Datasheet (PDF)

2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV) 2SJ516 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.3 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −250 V) z Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltag.

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2SJ516 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV) 2SJ516 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z Low drain-source ON resistance : RDS (ON) = 0.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 5.3 S (typ.) z Low leakage current : IDSS = −100 μA (max) (VDS = −250 V) z Enhancement mode : Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg −250 −250 ±20 −6.5 −13 35 157 −6.5 3.5 150 −55 to 150 V V V A A W mJ A mJ °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 3.57 °C / W 62.5 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 6.3 mH, RG = 25 Ω, IAR = −6.5 A Note 3: Repetitive rating; Pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2009-09-29 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol Test Condition IGSS IDSS VGS = ±16 V, VDS = 0 V VDS = −250 V, VGS = 0 V V (BR) DSS ID = −10 mA, VGS = 0 V Vth RDS (ON) |Yfs| Ciss Crss Coss VDS = −10 V, ID = −1 mA VGS = −10 V, ID = −3 A VDS = −10 V, ID = −3 A VDS = −10 V, VGS = 0 V, f = 1 MHz tr 2SJ516 Min — — −250 −1.5 — 2.5 — — — Typ. — — — — 0.6 5.3 1120 110 320 Max ±10 −100 — −3.5 0.8 — — — — Unit μA μA V V Ω S pF — 17 — Switching time Turn−on time Fall time ton tf — 34 — ns —6— Turn−off time toff Total gate charge (Gate−source plus gate−drain) Qg Gate−source charge Qgs VDD ≈ −200 V, VGS = −10 V, ID = −6.5 A Gate−drain (“mill.


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