BTB12-800BW3G

www.DataSheet4U.com BTB12-600BW3G, BTB12-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required. Features http://onsemi.com ăBlocking Voltage to 800 V ăOn‐State Current Rating of 12 Amperes RMS at 25°C ăUniform Gate Trigger Currents in Three Quadrants ăHigh Immunity to dV/dt - 2000 V/ms minimum at 125°C ăMinimizes Snubber Networks for Protection ăIndustry Standard TO‐220AB Package ăHigh Commutating dI/dt - 4 A/ms minimum at 125°C ăThese are Pb-Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB12-600BW3G BTB12-800BW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 12 120 A A Value Unit V TRIACS 12 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM 1 2 3 TO-220AB CASE 221A STYLE 4 BTB12-xBWG AYWW I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg 78 VDSM/VRSM +100 4.0 20 1.0 -ā40 to +125 -ā40 to +150 A2se...