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BTB16-600CW3G Dataheets PDF



Part Number BTB16-600CW3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Triacs
Datasheet BTB16-600CW3G DatasheetBTB16-600CW3G Datasheet (PDF)

BTB16-600CW3G, BTB16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 16 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 1000 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 8..

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BTB16-600CW3G, BTB16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 16 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 1000 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 8.5 A/ms minimum at 125°C • These are Pb−Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB16−600CW3G BTB16−800CW3G VDRM, VRRM 600 800 V On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) IT(RMS) ITSM I2t 16 A 170 A 144 A2sec Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) VDSM/ VRSM VDSM/VRSM +100 V Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) PG(AV) 1.0 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. http://onsemi.com TRIACS 16 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G 4 MARKING DIAGRAM 123 x A Y WW G TO−220AB CASE 221A STYLE 4 BTB16−xCWG AYWW = 6 or 8 = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device BTB16−600CW3G Package TO−220AB (Pb−Free) Shipping 50 Units / Rail BTB16−800CW3G TO−220AB 50 Units / Rail (Pb−Free) © Semiconductor Components Industries, LLC, 2011 August, 2011 − Rev. 2 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 Publication Order Number: BTB16−600CW3/D BTB16−600CW3G, BTB16−800CW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds Symbol RqJC RqJA TL Value 2.1 60 260 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS TJ = 25°C TJ = 125°C IDRM/ IRRM − − − − Peak On-State Voltage (Note 2) (ITM = ± 22.5 A Peak) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VTM − − IGT 2.0 − 2.0 − 2.0 − Holding Current (VD = 12 V, Gate Open, Initiating Current = ±500 mA) Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IH − − IL −− −− −− Gate Trigger Voltage (VD = 12 V, RL = 33 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGT 0.5 − 0.5 − 0.5 − Gate Non−Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGD 0.2 − 0.2 − 0.2 − DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) Critical Rate of Rise of On−State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. (dI/dt)c dI/dt dV/dt 8.5 − 1000 − − − Max 0.005 2.0 1.55 35 35 35 50 60 65 60 1.7 1.1 1.1 − − − − 50 − Unit °C/W °C Unit mA V mA mA mA V V A/ms A/ms V/ms http://onsemi.com 2 BTB16−600CW3G, BTB16−800CW3G Symbol VDRM IDRM VRRM IRRM VTM IH Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IRRM at VRRM on state IH Quadrant 3 MainTerminal 2 − VTM VTM IH off state Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II IGT − (−) IGT GATE MT1 REF (−) MT2 (+) IGT GATE MT1 REF (−) MT2 Quadrant I + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV − MT2 NEGATIVE.


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