Document
BTB16-600CW3G, BTB16-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 800 V • On-State Current Rating of 16 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 1000 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 8.5 A/ms minimum at 125°C • These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
BTB16−600CW3G BTB16−800CW3G
VDRM, VRRM
600 800
V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms)
IT(RMS) ITSM
I2t
16 A 170 A
144 A2sec
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
VDSM/ VRSM
VDSM/VRSM +100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
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TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
MT2
MT1 G
4 MARKING DIAGRAM
123
x A Y WW G
TO−220AB CASE 221A
STYLE 4
BTB16−xCWG AYWW
= 6 or 8 = Assembly Location = Year = Work Week = Pb−Free Package
PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2
ORDERING INFORMATION
Device BTB16−600CW3G
Package TO−220AB (Pb−Free)
Shipping 50 Units / Rail
BTB16−800CW3G TO−220AB 50 Units / Rail (Pb−Free)
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 2
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
1 Publication Order Number: BTB16−600CW3/D
BTB16−600CW3G, BTB16−800CW3G
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction−to−Case Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol RqJC RqJA TL
Value
2.1 60
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C TJ = 125°C
IDRM/ IRRM
− −
− −
Peak On-State Voltage (Note 2) (ITM = ± 22.5 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−)
VTM − −
IGT 2.0 − 2.0 − 2.0 −
Holding Current (VD = 12 V, Gate Open, Initiating Current = ±500 mA)
Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−)
IH − −
IL −− −− −−
Gate Trigger Voltage (VD = 12 V, RL = 33 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−)
VGT 0.5 − 0.5 − 0.5 −
Gate Non−Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−)
VGD 0.2 − 0.2 − 0.2 −
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber)
Critical Rate of Rise of On−State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
(dI/dt)c dI/dt dV/dt
8.5 − 1000
− − −
Max
0.005 2.0
1.55
35 35 35 50
60 65 60
1.7 1.1 1.1
− − −
−
50
−
Unit °C/W
°C Unit mA
V mA
mA mA
V
V
A/ms A/ms V/ms
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BTB16−600CW3G, BTB16−800CW3G
Symbol
VDRM IDRM VRRM IRRM
VTM IH
Voltage Current Characteristic of Triacs (Bidirectional Device)
+ Current
Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current
Maximum On State Voltage Holding Current
IRRM at VRRM
on state
IH
Quadrant 3 MainTerminal 2 −
VTM
VTM IH
off state
Quadrant 1 MainTerminal 2 +
+ Voltage IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE (Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II IGT −
(−) IGT GATE
MT1
REF
(−) MT2
(+) IGT GATE
MT1
REF
(−) MT2
Quadrant I + IGT
Quadrant III
(−) IGT GATE
MT1
REF
(+) IGT GATE
MT1
REF
Quadrant IV
− MT2 NEGATIVE.