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BUL642D2 Dataheets PDF



Part Number BUL642D2
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description High Gain Bipolar NPN Transistor
Datasheet BUL642D2 DatasheetBUL642D2 Datasheet (PDF)

www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged. Features http://onsem.

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www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged. Features http://onsemi.com 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V • Extremely Low Storage Time Min/Max Guarantees Due to the • • • • • H2BIP Structure which Minimizes the Spread Integrated Collector−Emitter Free Wheeling Diode Fully Characterized Dynamic VCEsat “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads Avalanche Energy 20 mJ Typical Capability Pb−Free Package is Available* MARKING DIAGRAM 4 TO−220AB CASE 221A STYLE 1 1 2 BUL642D2G AYWW 3 BUL642D2 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BUL642D2 BUL642D2G Package TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 1 Publication Order Number: BUL642D2/D BUL642D2 www.DataSheet4U.com MAXIMUM RATINGS Rating Collector−Emitter Sustaining Voltage Collector−Base Breakdown Voltage Emitter−Base Voltage Collector Current Base Current − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) Symbol VCEO VCES VEBO IC ICM IB IBM PD TJ, Tstg Value 440 825 11 3.0 8.0 2.0 4.0 75 0.6 −65 to +150 Unit Vdc Vdc Vdc Adc Adc W W/°C °C *Total Device Dissipation @ TC = 25°C *Derate above 25°C Operating and Storage Temperature Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. TYPICAL GAIN Rating Typical Gain @ IC = 1 A, VCE = 2 V Typical A, VCE = 1 V Symbol hFE hFE Value 45 50 Unit − − THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 in. from Case for 5 seconds 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10% Symbol RqJC RqJA TL Value 1.6 62.5 260 Unit °C/W °C/W °C http://onsemi.com 2 BUL642D2 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ.


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