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BUX85G SWITCHMODEtNPN Silicon Power Transistors
The BUX85G is designed for high voltage, high speed...
www.DataSheet4U.com
BUX85G SWITCHMODEt
NPN Silicon Power
Transistors
The BUX85G is designed for high voltage, high speed power switching applications like converters, inverters, switching
regulators, motor control systems.
Features http://onsemi.com
VCEO(sus) − 450 V VCES(sus) − 1000 V Fall time = 0.3 ms (typ) at IC = 1.0 A VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A These Devices are Pb−Free and are RoHS Compliant*
2.0 AMPERES POWER
TRANSISTOR NPN SILICON 450 VOLTS, 50 WATTS
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) Symbol VCEO(sus) VCES VEBO ICM IB IBM IBM PD TJ, Tstg IC Value 450 1000 5 2 3.0 0.75 1.0 1 50 400 −65 to +150 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C _C BUX85G AY WW Symbol RqJC RqJA TL Max 2.5 62.5 275 Unit _C/W _C/W _C BUX85 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package 1 2 3 TO−220AB CASE 221A−09 STYLE 1
Reverse Base Current − Peak Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the ...