BUX85G

www.DataSheet4U.com BUX85G SWITCHMODEtNPN Silicon Power Transistors The BUX85G is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems. Features http://onsemi.com VCEO(sus) − 450 V VCES(sus) − 1000 V Fall time = 0.3 ms (typ) at IC = 1.0 A VCE(sat) = 1.0 V (max) at IC = 1.0 A, IB = 0.2 A These Devices are Pb−Free and are RoHS Compliant* 2.0 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS, 50 WATTS MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current − Continuous − Peak (Note 1) − Continuous − Peak (Note 1) Symbol VCEO(sus) VCES VEBO ICM IB IBM IBM PD TJ, Tstg IC Value 450 1000 5 2 3.0 0.75 1.0 1 50 400 −65 to +150 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C _C BUX85G AY WW Symbol RqJC RqJA TL Max 2.5 62.5 275 Unit _C/W _C/W _C BUX85 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package 1 2 3 TO−220AB CASE 221A−09 STYLE 1 Reverse Base Current − Peak Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Junction Temperature Range MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the ...