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US6U37
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
zStructure Silicon N-channel MOSFET / Schottky...
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US6U37
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
zStructure Silicon N-channel MOSFET /
Schottky barrier diode zDimensions (Unit : mm)
TUMT6
zFeatures 1) Nch MOSFET and
schottky barrier diode are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF
schottky barrier diode.
Abbreviated symbol : U37
zApplications Switching zPackage specifications
Package Type US6U37 Code Basic ordering unit (pieces) Taping TR 3000
zInner circuit
(6) (5) (4)
∗2
(1)Gate (2)Source (3)Cathode (4)Anode (5)Anode (6)Drain
∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3)
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Tch PD
∗2
Limits 30 ±12 ±1.5 ±6.0 0.6 6.0 150 0.7
Unit V V A A A A °C W / ELEMENT
Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation
∗1 60Hz 1cycle ∗2 Mounted on ceramic board
Symbol VRM VR IF IFSM Tj PD
∗1
Limits 25 20 0.7 10 150 0.5
Unit V V A A °C W / ELEMENT
∗2
0.2Max.
1/4
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US6U37
Transistors
Parameter Power dissipation Range of storage temperature
∗1 Mounted on a ceramic board
Symbol PD ∗1 Ts...