SILICON MONOLITHIC INTEGRATED CIRCUIT
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STRUCTURE
SILICON MONOLITHIC INTEGRATED CIRCUIT
FUNCTION PRODUCT SERIES
HIGH SPEED SINGLE C...
Description
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STRUCTURE
SILICON MONOLITHIC INTEGRATED CIRCUIT
FUNCTION PRODUCT SERIES
HIGH SPEED SINGLE CMOS OPERATIONAL AMPLIFIER
BU7481G BU7481SG
・Wide output voltage range(VSS~VDD) ・Wide operating temperature range (BU7481SG:-40[℃]~105[℃]) ・Low input bias current(1[pA] typ.) ・Slew Rate(3.2[V/μs] typ.) ・Low supply current(420[μA] typ.) ・Low power supply voltage operation(1.8[V]~5.5[V])
FEATURES
○ABSOLUTE MAXIMUM RATINGS(Ta=25[℃])
Parameter Supply Voltage Power dissipation Differential Input Voltage(*3) Input Common-mode Voltage Range Operating Temperature range Topr BU7481S Storage Temperature Range Maximum junction Temperature Tstg Tjmax -40~+105 -55~+125 +125 ℃ ℃ Symbol VDD-VSS Pd Vid Vicm BU7481 Rating +7 540(*1)(*2) VDD-VSS (VSS-0.3)~VDD+0.3 -40~+85 ℃ Unit V mW V V
・This IC is not designed for protection against radioactive rays. (*1) To use at temperature above Ta=25[℃] reduce 5.4[mW]. (*2) Mounted on a glass epoxy PCB(70[mm]×70[mm]×1.6[mm]). (*3) The voltage difference between inverting input and non-inverting input is the differential input voltage. Then input terminal voltage is set to more than VSS.
○OPERATING CONDITION(BU7481G:Ta=-40[℃]~+85[℃] BU7481SG:Ta=-40[℃]~+105[℃])
Parameter Supply Voltage Symbol VDD Rating +1.8~+5.5 (Single Supply) Unit V
REV. B
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T
○ELECTRICAL CHARACTERISTICS (unless otherwise specified VDD=+3[V]、VSS=0[V])
Parameter Input offset voltage (*4)(*6) Input offset current (*4) Input bias current (*4)...
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