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PDB-C107 Dataheets PDF



Part Number PDB-C107
Manufacturers Advanced Photonix
Logo Advanced Photonix
Description Blue Enhanced Photoconductive Silicon Photodiode
Datasheet PDB-C107 DatasheetPDB-C107 Datasheet (PDF)

Blue Enhanced Photoconductive Silicon Photodiode www.DataSheet4U.com PDB-C107 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ±.008 [0.20] .300 [7.62] .135 [3.43] MAX .070 [1.78] ANODE 2X Ø.020 [0.51] ±.008 [0.20] Ø.355 [9.02] 120° VIEWING ANGLE CATHODE .265 [6.73] CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .236 [5.99] 2X 1.50 [38.1] MIN .136 [3.45] .124 [3.15] ACTIVE AREA CERAMIC PACKAGE CERAMIC PACKAGE .224 [5.69] ACTIVE AREA FEATURES • • • • Low noise Blue enhan.

  PDB-C107   PDB-C107



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Blue Enhanced Photoconductive Silicon Photodiode www.DataSheet4U.com PDB-C107 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ±.008 [0.20] .300 [7.62] .135 [3.43] MAX .070 [1.78] ANODE 2X Ø.020 [0.51] ±.008 [0.20] Ø.355 [9.02] 120° VIEWING ANGLE CATHODE .265 [6.73] CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .236 [5.99] 2X 1.50 [38.1] MIN .136 [3.45] .124 [3.15] ACTIVE AREA CERAMIC PACKAGE CERAMIC PACKAGE .224 [5.69] ACTIVE AREA FEATURES • • • • Low noise Blue enhanced High shunt resistance High response DESCRIPTION The PDB-C107 is a blue enhanced PIN silicon photodiode in a photoconductive mode, packaged in a ceramic package. APPLICATIONS • Instrumentation • Industrial • Medical ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED VBR TSTG TO TS Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -40 -40 75 +100 +100 +240 V °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) 1150 SYMBOL PARAMETER MIN MAX UNITS * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS H = 100 fc, 2850 K VR = 5V VR = 10 mV VR =10 V, f = 1 MHz Spot Scan l= 450 nm V, VR = 0 V I = 10 μA VR = 0V @ l=Peak RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN 170 200 350 0.15 75 TYP 150 1000 100 0.17 100 3X10-13 190 13 MAX 300 UNITS µA nA MΩ pF nm A/W V W/ √ Hz nS 1100 **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com .


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