PDB-V110

Blue Enhanced Photovoltaic Silicon Photodiode www.DataSheet4U.com PDB-V110 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] ANODE INDEX .084 [2.13] .076 [1.93] ±.005 [0.13] .053 [1.35] 2X Ø.017 [0.43] ANODE .657 [16.69] .643 [16.33] 120° VIEWING ANGLE CATHODE .484 [12.29] CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .408 [10.36] .596 [15.14] .584 [14.83] 2X .50 [12.7] .005 [0.13] MAX EPOXY ABOVE PACKAGE .402 [10.21] .371 [9.42] ACTIVE AREA CERAMIC PACKAGE CERAMIC PACKAGE .391 [9.93] ACTIVE AREA FEATURES Low noise Blue enhanced High shunt resistance High response DESCRIPTION The PDB-V110 is a blue enhanced PIN silicon photodiode in a photovoltaic mode, packaged in a ceramic package. APPLICATIONS Instrumentation Industrial Medical ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED VBR TSTG TO TS Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -20 -20 75 +80 +60 +240 V °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.00 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) 1150 SYMBOL PARAMETER MIN MAX UNITS * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent...