N-channel enhancement mode Field-Effect Transistor
N R N-CHANNEL MOSFET
JCS2N60
MAIN CHARACTERISTICS
ID 2.0 A VDSS 600 V Rdson(@Vgs=10V) 5 Ω Qg 15.3 nC
Package
...
Description
N R N-CHANNEL MOSFET
JCS2N60
MAIN CHARACTERISTICS
ID 2.0 A VDSS 600 V Rdson(@Vgs=10V) 5 Ω Qg 15.3 nC
Package
LED
APPLICATIONS High frequency switching
mode power supply Electronic ballast LED power supply
CrssB B ( 7.6pF) dv/dt RoHS
FEATURES Low gate charge Low CrssB B (typical 7.6pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product
ORDER MESSAGE
Order codes
Marking
Package
Halogen Free
JCS2N60V-O-V-N-B JCS2N60R-O-R-N-B JCS2N60R-O-R-N-A JCS2N60C-O-C-N-B JCS2N60F-O-F-N-B JCS2N60V-R-V-N-B
JCS2N60V JCS2N60R JCS2N60R JCS2N60C JCS2N60F JCS2N60V
IPAK DPAK DPAK TO-220C TO-220MF IPAK
NO NO NO NO NO YES
Packaging
Tube Tube Reel Tube Tube Tube
Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 2.15 g(typ) 2.20 g(typ) 0.35 g(typ)
:201501F
1/12
R
ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
Value JCS2N60V/R JCS2N60C
-
Drain-Source Voltage
VDSSB B
600
Drain Current-continuous
IDB
T=25℃
B
T=100℃
1.9 1.1
2.0 1.3
( 1) Drain Current – pulse IDMB B (note 1)
6.0
Gate-Source Voltage
VGSSB B
±30
( 2)
Single Pulsed Avalanche Energy(note 2)
EASB B
120
( 1)
Avalanche Current(note 1)
IARB B
2.0
( 1)
Repetitive Avalanche Energy (note 1)
EARB B
5.4
( 3) Peak Diode Recovery Dv/dt (note 3)
dv/dt
5.5
Power Dissipation
P T =25℃D CB B B B -Derate above 25℃
44 0.35
54 0.43
Operating and Storage
T ,TJ STGB B
BB
Temperature Range
-55~+150
Maximum Lead ...
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