Silicon Controlled Rectifier
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Shantou Huashan Electronic Devices Co.,Ltd.
HCP20C60
Silicon Controlled Rectifier
█ Features
* Re...
Description
www.DataSheet4U.com
Shantou Huashan Electronic Devices Co.,Ltd.
HCP20C60
Silicon Controlled Rectifier
█ Features
* Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=20A) * Low On-State Voltage (1.3V(Typ.)@ ITM) * Non-isolated Type
█ General Description
Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection,motor control cicuit in power tool,inrush current limit circuit and heating control system.
█ Absolute Maximum Ratings(Ta=25℃ unless otherwise specified)
T s t g —— Storage Temperature ------------------------------------------------------ - 40~125 ℃ T j —— Operating Junction Temperature ---------------------------------------------- - 40~125 ℃ VDRM ——Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V IT(RMS)——R.M.S On-State Current(180º Conduction Angles)---------------------------------------- 20A IT(AV) ——Average On-State Current (Half Sine Wave : TC = 102 °C) -----------------------------------------13A ITSM ——Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 220A I2t ——Circuit Fusing Considerations(t = 8.3ms) ------------------------------------------------------------ 242 A2s PGM ——Forward Peak Gate Power Dissipation (Ta=25℃) --------------------------------------------------- 20W PG(AV) ——Forward Average Gate Power Dissipat...
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