AT49LV8011T

www.DataSheet4U.com Features Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) Access Time – 90 ns Sector Erase Architecture Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Two 8K Word (16K Byte) Sectors with Individual Write Lockout Four 4K Word (8K Byte) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 200 ms Dual Plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors Memory Plane B: Fourteen 32K Word Sectors Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation – 25 mA Active – 10 µA Standby Data Polling, Toggle Bit, Ready/Busy for End of Program Detection Optional VPP Pin for Fast Programming RESET Input for Device Initialization Sector Program Unlock Command TSOP and CBGA Package Options Top or Bottom Boot Block Configuration Available 8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T Description The AT49BV/LV8011(T) is a 2.7- to 3.3-volt 8-megabit Flash memory organized as 524,288 words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for erase operations. The device is ...