MRF8S7120NR3

Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.DataSheet4U.com Rev. 0, 5/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.2 19.2 19.2 ηD (%) 36.6 37.1 38.1 Output PAR (dB) 6.3 6.4 6.3 ACPR (dBc) --38.3 --38.2 --37.6 MRF8S7120NR3 728-768 MHz, 32 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 178 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Typical Pout @ 1 dB Compression Point ≃ 125 Watts CW Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate--Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Optimized for Doherty Applications 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R3 Suffix = 25...