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MSW2000-200 Dataheets PDF



Part Number MSW2000-200
Manufacturers Aeroflex Circuit Technology
Logo Aeroflex Circuit Technology
Description Surface Mount PIN Diode SP2T Switches
Datasheet MSW2000-200 DatasheetMSW2000-200 Datasheet (PDF)

www.DataSheet4U.com Surface Mount PIN Diode SP2T Switches MSW2000-200 & MSW2001-200 Series Datasheet Features • • • • • • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H Higher Average Power Handling than Plastic (125 W C.W.) Higher Voltage > 500 Volts for Higher RF Peak Power (500 W) Lower Insertion Loss ( 0.25 dB ) & Higher IIP3 (65 dBm) Operates From + Voltage Only (+5V, & +28V to +125V) RoHS Compliant Description The MSW2000-200 and MSW2001-200 Series of Surface Moun.

  MSW2000-200   MSW2000-200


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www.DataSheet4U.com Surface Mount PIN Diode SP2T Switches MSW2000-200 & MSW2001-200 Series Datasheet Features • • • • • • Surface Mount SP2T Switch in Compact Outline: 8mm L x 5mm W x 2.5 mm H Higher Average Power Handling than Plastic (125 W C.W.) Higher Voltage > 500 Volts for Higher RF Peak Power (500 W) Lower Insertion Loss ( 0.25 dB ) & Higher IIP3 (65 dBm) Operates From + Voltage Only (+5V, & +28V to +125V) RoHS Compliant Description The MSW2000-200 and MSW2001-200 Series of Surface Mount Silicon PIN Diode SP2T Switches is manufactured using Aeroflex/Metelics proven hybrid manufacturing process incorporating High Voltage PIN Diodes and passive devices integrated within a ceramic substrate. This low profile, compact, surface mount component, (8mm L x 5mm W x 2.5 mm H) offers superior low and high signal performance to comparable MMIC devices in QFN packages. The SP2T switches are designed in an asymmetrical topology to optimize Tx-Ant Loss and Tx-Rx Isolation performance. Using PIN Diodes with lower thermal resistance ( < 10 ºC/W ), RF C.W. incident power levels of +51 dBm and RF peak incident power levels of +57 dBm are very achievable in higher power cold and hot switching applications @ + 85 º C. The lower PIN Diode series resistance ( < 0.8 Ω ), coupled with the longer minority carrier lifetime, ( > 2 μS ), provides better IIP3 distortion values > +65 dBm. Applications These MSW2000-200 and MSW2001-200 Series SP2T Switches are designed to be used in higher power switch applications, operating from 20 MHz to 4000 MHz, requiring high volume, surface mount, solder re-flow manufacturing. These products are durable, reliable, and capable of meeting all military, commercial, and industrial environments. The devices are fully RoHS compliant. Environmental Capabilities The MSW2000-200 and MSW2001-200 Series SP2T Switches are capable of meeting the environmental requirements of MIL-STD-202 and MIL-STD-750. ESD and Moisture Sensitivity Level Rating PIN Diode Switches are susceptible to ESD conditions as with all semiconductors. The ESD rating for this device is Class 1C, HBM. The moisture sensitivity level rating for this device is MSL 2 Document DS 12633 Rev B Revision Date: 04/20/2010 SP2T PIN Diode Switches www.DataSheet4U.com MSW2000-200 Electrical Specifications @ Zo = 50 Ω, TA=+ 25 ºC (Unle ss Othe rwiseDe fine d) Parameter Frequency Tx-Ant Insertion Loss Symbol F IL(Tx) IL(Rx) RL(Tx) RL(Rx) Isol(Rx) Isol(Tx) Pinc(CW) Units MHz dB 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) Ant-Rx Insertion Loss dB 0V@ 100 mA (Rx ) 28V @ 0 mA (Tx) Tx-Ant Return Loss dB 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) 0 V @ 100 mA (Rx ) 28V @ 0 mA (Tx) Tx-Rx Isolation dB 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) Rx-Tx Isolation dB 0 V @ 100 mA (Rx ) 28V @ 25 mA (Tx) C.W. Incident Power IL(Tx) C.W. Incident Power IL(Rx) Peak. Incident Power IL(Tx) Switching Speed Input 3rd Order Intercept Point Pinc(CW) dBm dBm 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) 1.5:1 Source & Load VSWR 0V @ 100 mA (Rx ) 28V @ 0mA(Tx) 1.5:1 Source & Load VSWR Pinc(Pk) dBm 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) 1.5:1 Source & Load VSWR Ts IIP3 μS dBm (10% -90% RF Voltage) F1 = 500 MHz F2 = 510 MHz P1 = P2 = +40 dBm 60 +57 @ 10 μS Pulse, 1 % Duty 2 65 3 +43 +43 +51 +51 | -22 | | -26 | | -48 | | -52 | | -20 | | -22 | | -0.25 | | -0.35 | Test Conditions Minimum Value 20 Typical Value 50 – 1000 | -0.15 | Maximum Value 1500 | -0.25 | Ant-Rx Return Loss dB | -20 | | -23 | Electrical Specification Notes: 1. Switching Speed ( 50 % TTL – 10/90 % RF Voltage ) is a Function of the PIN Diode Driver Performance. A RC “ Current Spiking Network” is used on the Driver output to provide a Ic = C dV/dt transient current to move Stored charge through the PIN Diode, typical values are: R = 50 – 220 Ω and C = 470 – 1,000 pF. 2. For Hot Switching, PIN Diode Driver must Transition from Forward Bias to Reverse Bias and Reverse Bias to Forward Bias within 100 ηS with a parallel RC spiking network at the Driver Output. 3. Backside RF and D.C. Grounding Area of Device must be Completely Solder Attached to RF Circuit Board Vias for Proper Electrical and Thermal RF Circuit Grounding. 2 TEL: 603-641-SEMI (7364) • [email protected] • www.aeroflex.com/metelics Revision Date: 4/20/2010 SP2T PIN Diode Switches MSW2001-200 Electrical Specifications @ Zo = 50 Ω, TA=+ 25 ºC (Unle ss Othe rwiseDe fine d) Parameter Frequency Tx-Ant Insertion Loss Symbol F IL(Tx) IL(Rx) RL(Tx) RL(Rx) Isol(Rx) Isol(Tx) Pinc(CW) Units MHz dB 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) Ant-Rx Insertion Loss dB 0V@ 100 mA (Rx ) 28V @ 0 mA (Tx) Tx-Ant Return Loss dB 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) 0 V @ 100 mA (Rx ) 28V @ 0 mA (Tx) Tx-Rx Isolation dB 0 V @ 100 mA (Tx ) 28V @ 25 mA (Rx) Rx-Tx Isolation dB 0 V @ 100 mA (Rx ) 28V @ 25 mA (Tx) C.W. Incident Power IL(Tx) C.W. Incident Power IL(Rx) Peak. Incident Power IL(Tx) Switching Speed Input 3rd Order Intercept Point Ts IIP3 μS dBm Pinc(CW) dBm dBm 0 V @ 100 mA (Tx ) 28V .


MAX2063 MSW2000-200 MSW2001-200


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