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MRF8S26120HR3 Dataheets PDF



Part Number MRF8S26120HR3
Manufacturers Motorola
Logo Motorola
Description RF Power Field Effect Transistor
Datasheet MRF8S26120HR3 DatasheetMRF8S26120HR3 Datasheet (PDF)

Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Chan.

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Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 15.5 15.5 15.6 ηD (%) 31.5 31.1 31.1 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) --38.0 --37.3 --36.7 MRF8S26120HR3 MRF8S26120HSR3 2620-2690 MHz, 28 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 110 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C (1,2) CASE 465-06, STYLE 1 NI-780 MRF8S26120HR3 CASE 465A-06, STYLE 1 NI-780S MRF8S26120HSR3 Symbol VDSS VGS VDD Tstg TC TJ CW Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225 141 0.78 Unit Vdc Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 72°C, 28 W CW, 28 Vdc, IDQ = 900 mA, 2690 MHz Case Temperature 85°C, 110 W CW(4), 28 Vdc, IDQ = 900 mA, 2690 MHz Symbol RθJC Value (2,3) 0.53 0.47 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. © Freescale Semiconductor, Inc., 2010. All rights reserved. MRF8S26120HR3 MRF8S26120HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum).


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