EMT1DXV6T5

www.DataSheet4U.com EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. Features (3) (2) (1) Lead−Free Solder Plating Low VCE(SAT), t0.5 V These are Pb−Free Devices MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit V V V mAdc Q1 Q2 (4) (5) (6) 6 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range RqJA TJ, Tstg RqJA Symbol PD 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Max Unit mW SOT−563 CASE 463A STYLE 1 MARKING DIAGRAM mW/°C °C/W 3T M G G 1 Symbol PD Unit mW mW/°C °C/W °C 3T = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device a...