EMX1DXV6T1

www.DataSheet4U.com EMX1DXV6T1, EMX1DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. Features http://onsemi.com Reduces Board Space High hFE, 210−460 (Typical) Low VCE(sat), < 0.5 V These are Pb−Free Devices DUAL NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT (6) (5) (4) MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 100 Unit Vdc Vdc Vdc mAdc (1) (2) (3) Tr1 Tr2 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Junction and Storage Temperature Range Symbol PD 357 (Note 1) 2.9 (Note 1) RqJA 350 (Note 1) mW mW/°C °C/W Max Unit 6 1 SOT−563 CASE 463A STYLE 1 Symbol PD Max 500 (Note 1) 4.0 (Note 1) Unit mW mW/°C °C/W °C 3X M G G 1 3X = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM RqJA TJ, Tstg 250 (Note 1) −55 to +150 Maximum ratings are those values beyond which device dama...