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MP1006 Dataheets PDF



Part Number MP1006
Manufacturers Comchip Technology
Logo Comchip Technology
Description (MP1000 - MP1010) Silicon Bridge Rectifiers
Datasheet MP1006 DatasheetMP1006 Datasheet (PDF)

www.DataSheet4U.com Silicon Bridge Rectifiers COMCHIP www.comchiptech.com MP1000 Thru 1010 Reverse Voltage: 50 - 1000 Volts Forward Current: 10 Amp Features - Diffused Junction - High Current Capability High Case Dielectric Strength High Surge Current Capability Ideal for Printed Circuit Board Application Plastic Material has Underwriters Laboratory Flammability Classification 94V-O MP-10 H J G + ~ A E ~ E - Mechanical Data - Case: Molded Plastic - Terminals: Plated Leads Solderable.

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www.DataSheet4U.com Silicon Bridge Rectifiers COMCHIP www.comchiptech.com MP1000 Thru 1010 Reverse Voltage: 50 - 1000 Volts Forward Current: 10 Amp Features - Diffused Junction - High Current Capability High Case Dielectric Strength High Surge Current Capability Ideal for Printed Circuit Board Application Plastic Material has Underwriters Laboratory Flammability Classification 94V-O MP-10 H J G + ~ A E ~ E - Mechanical Data - Case: Molded Plastic - Terminals: Plated Leads Solderable per MIL STD-202, Method 208 - Weight: 5.4 grams (approx.) - Mounting Position: Through Hole for #6 Screw - Mounting Torque: 5.0 Inch-pounds Maximum D Dim A B C D E C B Metal Heat Sink MP-10 Min Max 14.73 15.75 5.80 6.90 19.00 1.00 Ø Typical 5.11 6.14 Hole for # 6 screw G 3.60 4.00 H 10.30 11.30 J 2.38 x 45oC Typical All Dimensions in mm Maximum Ratings and Electrical Characterics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. CHARACTERISTICS Peak Repetitive Reverse Voltage Working Peak Rever se Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note1) @ T A = 50°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (per element) @I F = 5.0A Peak Reverse Current @T C = 25°C At Rated DC Blocking Voltage @T C = 100°C I2t Rating for Fusing (t < 8.3ms) (Note2) Typical Junction Capacitance (Note3) Typical Thermal Resistance (Note4) Operating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IR I2t Cj R JC MP MP MP MP MP MP MP UNIT 1000 1001 1002 1004 1006 1008 1010 50 35 100 70 200 140 400 280 10 200 1.1 10 1.0 64 110 7.5 -65 to +150 600 420 800 560 1000 700 V V A A V uA mA A2s pF K/W °C Tj, TSTG Note: 1. Non-repetitive for t > 1ms and < 8.3ms. 2. Thermal resistance junction to am bient mounted on PC board with 13.0 x 13.0 x 0.03mm thick land areas. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 4. Thermal resistance junction to cas e per element. MDS0309003A Page 1 www.DataSheet4U.com Silicon Bridge Rectifiers Rating and Characteristic Curves (MP1000 thru 1010) COMCHIP www.comchiptech.com 10 10 I AV, Average forward OUTPUT current ( A ) Resistive or Inductive load 8 I F , Forward current ( A ) 1.0 6 4 0.1 Tj = 25 o C Pulse width = 300uS 2 0 25 50 75 100 125 0.01 0 0.4 0.8 1.2 1.6 T A , Ambient Temperature ( o C) V F , Instantaneous Forward Voltage (V) 240 10 Tc = 50 o C Single half sine-wave JEDEC method 200 I R, Instantaneous Reverse Current ( A ) I F, Peak Forward Surge Current ( A ) Tj =100o C 160 1.0 120 80 0.1 40 Tj =25o C 0 1.0 10 100 0.01 0 40 80 120 Number of Cycles at 60Hz Percent of Rated Peak Reverse Voltage (%) MDS0309003A Page 2 .


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