CHE1270

www.DataSheet4U.com CHE1270 RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270 is a detector that integrates a matched detection diode (Vdet). A reference diode is also available to be used in differential mode (Vref). It is designed for a wide range of applications where an accurate transmitted power control is required, typically commercial communication systems. The circuit is manufactured with a Schottky diode MMIC process, 1µm gate length, via holes through the substrate and air bridges. It is available in chip form. Vdet Vref DC RF_in CHE1270 Matching Transmitted power detection (mV) Main Features Vdetect= Vref-Vdet (mV) 10000 12 GHz 32GHz 1000 17GHz 37GHz 22GHz 40GHz 27GHz ■ Wide frequency range 12-40GHz ■ 35dB dynamic range ■ ESD protected ■ Chip size: 1.41 x 0.89 x 0.1mm ■ BCB layer protection 100 10 1 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Main Characteristics Tamb = +25° C, Vdc = +4.5V Symbol F Dr RL Parameter Frequency range Dynamic range Return Loss Min 12 Input power (dBm) Typ Max 40 Unit GHz dB dB 35 -10 ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions! Ref. : DSCHE1270-7297 - 24 Oct 07 1/6 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHE1270 Electrical Characteristics (1) Tamb = +25° C, Vdc = +4.5V Symbol F Dr IPr Frequen...