IXGQ90N27PB

Preliminary Technical Information PolarTM www.DataSheet4U.com IGBT for PDP Applications IXGQ90N27PB VCES = = ICP VCE(sat) ≤ 270 V 340 A 2.1 V Symbol Test Conditions Maximum Ratings TO-3P VCES VGEM IC25 ICPEAK I C(RMS) SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight TJ = 25°C to 150°C 270 ±30 V V A A A A G C E (TAB) TC = 25°C, IGBT chip capability TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% Lead current limit VGE = 15 V, TVJ = 150°C, RG = 20 Ω Clamped inductive load, VCE < 270 V TC = 25°C 90 340 75 ICM = 90 150 -55 ... +150 150 -55 ... +150 G = Gate E = Emitter C = Collector TAB = Collector W °C °C °C °C °C Nm/lb.in. g Features Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum plastic body temperature for 10 S Mounting torque 300 260 1.3/10 5.5 International standard package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications PDP Screen Drivers Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) ICES IC = 1 mA, VCE = VGE VCE = 270 V VGE = 0 V IGES VCE(sat) VCE = 0 V, VGE = ±20 V VGE = 15V, Note 1 IC = 50 A TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 V 1 μA 200 μA ±100 nA 1.3 1.3 1.67 1.80 2.1 V V V V DS99609B(02/07) TJ = 125°C IC = 100 A TJ = 125°C © 2006 IXYS All rights reserved IXGQ90N27PB Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi td(on) tri td(off) tfi RthJC RthCS ...