TIP562

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIP562 300 VCBO Collector-Base Voltage V TIP563 400 TIP562 300 VCEO Collector-Emitter Voltage V TIP563 400 VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 2 A 100 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W TIP562/563 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage TIP562 TIP563 IC=10mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.66A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1.66A ICEO Collector Cutoff Current TIP562 TIP563 VCE= 270V;IB= 0 VCE= 360V;IB...