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TIP563 Dataheets PDF



Part Number TIP563
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description isc Silicon NPN Power Transistors
Datasheet TIP563 DatasheetTIP563 Datasheet (PDF)

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIP562 300 VCBO Collector-Base Voltage V TIP563 40.

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isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- TIP562 = 400V(Min)- TIP563 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for converters, inverters, pulse-width-modulated regulators, and a variety of power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT TIP562 300 VCBO Collector-Base Voltage V TIP563 400 TIP562 300 VCEO Collector-Emitter Voltage V TIP563 400 VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=100℃ TJ Junction Temperature 2 A 100 W 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W TIP562/563 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage TIP562 TIP563 IC=10mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1.66A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 1.66A ICEO Collector Cutoff Current TIP562 TIP563 VCE= 270V;IB= 0 VCE= 360V;IB= 0 ICBO Collector Cutoff Current TIP562 TIP563 VCB= 300V;IE= 0 VCB= 400V;IE= 0 IEBO Emitter Cutoff Current VEB= 8V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 10A ; VCE= 4V TIP562/563 MIN TYP. MAX UNIT 300 V 400 1.2 V 2.0 V 1.4 V 1.0 mA 1.0 0.1 mA 0.1 5.0 mA 20 8 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


TIP562 TIP563 AM1320N


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