Ultra-Low Power Asynchronous CMOS SRAM
N01L83W2A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 8 bit Overview
The N01L83W2A is an integrated memory device ...
Description
N01L83W2A
1Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 8 bit Overview
The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N01L83W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 8 SRAMs.
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Features
Single Wide Power Supply Range 2.3 to 3.6 Volts Very low standby current 2.0µA at 3.0V (Typical) Very low operating current 2.0mA at 3.0V and 1µs (Typical) Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical) Simple memory control Dual Chip Enables (CE1and CE2) Output Enable (OE) for memory expansion Low voltage data retention Vcc = 1.8V Very fast output enable access time 30ns OE access time Automatic power down to standby mode TTL compatible three-state output driver
Product Family
Part Number N01L83W2AT N01L83W2AN N01L83W2AT2 N01L83W2AN2 Package Type 32 - TSOP I 32 - STSOP I 32 -TSOP I Green 32 - STSOP I Green 55ns @ 2.7V -40oC to +85oC 2.3V - 3.6V 70ns ...
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