N04L1618C2A

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04L1618C2A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as NanoAmp’s N04L163WC1A, which is processed to operate at higher voltages. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L1618C2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs Features Single Wide Power Supply Range 1.65 to 2.2 Volts Very low standby current 0.5µA at 1.8V (Typical) Very low operating current 0.7mA at 1.8V and 1µs (Typical) Low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Outpu...