N04L1630C2B Datasheet (data sheet) PDF





N04L1630C2B Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY

N04L1630C2B   N04L1630C2B  

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AMI Semiconductor, Inc. ULP Memory Solut ions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, F AX: 408-935-7770 N04L1630C2B Advance w ww.DataSheet4U.com Information 4Mb Ult ra-Low Power Asynchronous CMOS SRAMs 25 6K × 16 bit POWER SAVER TECHNOLOGY TM Overview The N04L1630C2B is an integrat ed memory device containing a 4 Mbit St atic Random Access Memory org

N04L1630C2B Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY

N04L1630C2B   N04L1630C2B  
anized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS te chnology to provide both high-speed per formance and ultra-low power. The devic e operates with two chip enable (CE1 an d CE2) controls and output enable (OE) to allow for easy memory expansion. Byt e controls (UB and LB) allow the upper and lower bytes to be accessed








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