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N04L1630C2B Dataheets PDF



Part Number N04L1630C2B
Manufacturers AMI SEMICONDUCTOR
Logo AMI SEMICONDUCTOR
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAMs
Datasheet N04L1630C2B DatasheetN04L1630C2B Datasheet (PDF)

AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Advance www.DataSheet4U.com Information 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM Overview The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS techno.

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AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Advance www.DataSheet4U.com Information 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM Overview The N04L1630C2B is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L1630C2B is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves operating power while improving the performance over standard SRAMs. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 256Kb x 16 SRAMs. Features • Wide Power Supply Range 2.7 to 3.6 Volts • Very low standby current 1uA (Typical) • Very low operating current 2.0mA at 1µs (Typical) • Very low Page Mode operating current 0.8mA at 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Very fast output enable access time 30ns OE Access Time 55ns Random Access Time 30ns Page Mode Access Time • Automatic power down to standby mode • TTL compatible three-state output driver • RoHS Compliant TSOP and BGA packages Product Family Part Number N04L1630C2BB2 Package Type 48-BGA Green Operating Temperature -40oC to +85oC Power Supply (Vcc) 2.7V - 3.6V Speed Options 55ns 70ns Standby Operating Current (ISB), Current (Icc), Typical Typical 1µA 2 mA @ 1MHz N04L1630C2BT2 44-TSOP II Green (DOC# 14-02-042 ReI I ECN# 01-1374 The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com. 1 N04L1630C2B AMI Semiconductor, Inc. Pin Configurations (4Mb) A4 A3 A2 A1 A0 CE1 I/O0 I/O1 I/O2 I/O3 VCC VSS I/O4 I/O5 I/O6 I/O7 WE A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB I/O15 I/O14 I/O13 I/O12 VSS VCC I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17 Advance www.DataSheet4U.com Information 1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) TSOP II Pin Descriptions Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Lower Byte Data Input/Output Upper Byte Data Input/Output Power Ground Not Connected (DOC# 14-02-042 ReI I ECN# 01-1374 The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com. N04L1630C2B AMI Semiconductor, Inc. Functional Block Diagram Advance www.DataSheet4U.com Information Address Inputs A1 - A4 Word Address Decode Logic Address Inputs A0, A5 - A17 CE1 CE2 WE OE UB LB Page Address Decode Logic 16K Page x 16 word x 16 bit RAM Array Input/ Output I/O0 - I/O7 Mux and Buffers I/O8 - I/O15 Word Mux Control Logic Functional Description CE1 H X L L L L CE2 X L H H H H WE X X X L H H OE X X X X3 L H UB X X H L 1 LB X X H L 1 I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby Write3 Read Active POWER Standby Standby Standby Active Active Active L1 L1 L1 L 1 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested (DOC# 14-02-042 ReI I ECN# 01-1374 The specifications of this device are subject to .


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