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N04M1618L1A Dataheets PDF



Part Number N04M1618L1A
Manufacturers NanoAmp Solutions
Logo NanoAmp Solutions
Description 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM
Datasheet N04M1618L1A DatasheetN04M1618L1A Datasheet (PDF)

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04M1618L1A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit Overview The N04M1618L1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technol.

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N04M1618L1A www.DataSheet4U.com 4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit Overview The N04M1618L1A is an integrated memory device intended for non life-support (Class 1 or 2) medical applications. This device is a 4 megabit memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology with reliability inhancements for medical users. The base design is the same as NanoAmp’s N04M1618L2A, which has further reliability processing for life-support (Class 3) medical applications. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. This device is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in a JEDEC standard BGA package Features • Dual Power Supply for lowest power 1.4 to 2.3 Volts - VCC 1.4 to 3.6 Volts - VCCQ • Very low standby current 400nA at 2.0V and 37 deg C Maximum • Very low operating current 0.7mA at 1.8V and 1µs (Typical) • Low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.2V • Automatic power down to standby mode • Special Processing to reduce Soft Error Rate (SER) • Space saving BGA package available Product Family Part Number N04M1618L1AB N04M1618L1AT Package Type 48 - BGA 44 - TSOP II -40oC to +85oC 1.4V - 2.3V 85ns @ 1.7V 1.4V - 3.6V 150ns @ 1.4V 10 µA 3 mA @ 1MHz Operating Temperature Power Supply (Vcc)/(VccQ) Speed Standby Operating Current (ISB), Current (Icc), Max Max N04M1618L1AD Known Good Die Pin Configuration A4 A3 A2 A1 A0 CE1# I/O0 I/O1 I/O2 I/O3 VCC VSS I/O15 I/O14 I/O13 I/O12 WE# A16 A15 A14 A13 A12 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN ONE 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE# UB# LB# I/O4 I/O5 I/O6 I/O7 VSS VCCQ I/O11 I/O10 I/O9 I/O8 CE2 A8 A9 A10 A11 A17 Pin Descriptions 1 A B C D E F G H LB# I/O8 I/O9 VSS VCC 2 OE# UB# I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1# I/O1 I/O3 I/O4 I/O5 WE# A11 6 CE2 I/O0 I/O2 VCCQ VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Input/Output Power Ground Not Connected N04M1618L2AT TSOP I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (top) 6 x 8 mm Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 1 NanoAmp Solutions, Inc. Functional Block Diagram N04M1618L1A www.DataSheet4U.com Address Inputs A0 - A17 Address Decode Logic 256K x 16 Memory Array Input/ Output Mux and Buffers I/O0 - I/O7 I/O8 - I/O15 CE1 WE OE UB LB Control Logic Functional Description CE1 H X L L L CE2 X L H H H WE X X L H H OE X X X2 L H I/O0 - I/O7 High Z High Z Data In Data Out High Z MODE Standby1 Standby1 Write2 Read Active POWER Standby Standby Active Active Active 1. When the device is in standby mode, control inputs (WE and OE), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 2. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23209-01 11/01/02 The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com. 2 NanoAmp Solutions, Inc. Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER N04M1618L1A Rating –0.3 to VCC+0.3 –0.3 to 4.5 500 –40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V V mW o www.DataSheet4U.com C oC oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not.


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