N04Q1618C2B Datasheet (data sheet) PDF





N04Q1618C2B Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ

N04Q1618C2B   N04Q1618C2B  

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AMI Semiconductor, Inc. ULP Memory Solut ions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, F AX: 408-935-7770 N04Q1618C2B Advance I nformation www.DataSheet4U.com 4Mb Ult ra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Re duction 256K×16 bit POWER SAVER TECHNO LOGY Overview The N04Q16yyC2B are ultra -low power memory devices con

N04Q1618C2B Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ

N04Q1618C2B   N04Q1618C2B  
taining a 4 Mbit Static Random Access Me mory organized as 262,144 words by 16 b its. The device is designed and fabrica ted using AMI Semiconductor’s advance d CMOS technology to provide ultra-low active and standby power. The device op erates with two chip enable (CE1 and CE 2) controls and output enable (OE) to a llow for easy memory expansion. Byte co ntrols (UB and LB) allow the u








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