N04Q16YYC2B Datasheet (data sheet) PDF





N04Q16YYC2B Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ

N04Q16YYC2B   N04Q16YYC2B  

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NanoAmp Solutions, Inc. 670 North McCart hy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www .nanoamp.com N04Q16yyC2B Advance Infor mation www.DataSheet4U.com 4Mb Ultra-L ow Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduct ion 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices contain

N04Q16YYC2B Datasheet - 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ

N04Q16YYC2B   N04Q16YYC2B  
ing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technol ogy to provide ultra-low active and sta ndby power. The device operates with tw o chip enable (CE1 and CE2) controls an d output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower








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