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BUK652R7-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 5 July 2010 Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the...
