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BUK652R7-30C Dataheets PDF



Part Number BUK652R7-30C
Manufacturers NXP
Logo NXP
Description N-channel TrenchMOS intermediate level FET
Datasheet BUK652R7-30C DatasheetBUK652R7-30C Datasheet (PDF)

www.DataSheet4U.com BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 5 July 2010 Objective data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitab.

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