www.DataSheet4U.com
BUK652R7-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 5 July 2010 Objective data sheet
...
www.DataSheet4U.com
BUK652R7-30C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 5 July 2010 Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate drive sources Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; see Figure 1 Tmb = 25 °C; see Figure 2 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13; see Figure 14
[1]
Min -
Typ -
Max Unit 30 100 204 V A W mΩ
Static characteristics 2.72 3.2
www.DataSheet4U.com
NXP Semiconductors
BUK652R7-30C
N-channel TrenchMOS intermediate level FET
Quick reference data …continued Parameter non-repetitive drain-source avalanche energy gate-drain charge Conditions ID = 100 A; V...