IRLML9301TRPBF

VDS VGS Max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) -30 ± 20 64 103 V V mΩ mΩ PD - 96310C IRLML9301TRPbF HEXFET® Power MOSFET G1 3D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) System/Load Switch Features and Benefits Features Low RDS(on) ( ≤ 64mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Benefits Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability Symbol VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation VGS TJ, TSTG Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol Parameter eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s) Max. -30 -3.6 -2.9 -15 1.3 0.8 0.01 ± 20 -55 to + 150 Typ. ––– ––– Max. 100 99 Units V A W W/°C V °C Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through „ are on page 10 www.irf.com 1 02/09/12 IRLML9301TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––...