DatasheetsPDF.com

IRLML0040TRPBF

International Rectifier

HEXFET Power MOSFET

VDSS VGS Max RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 56 78 Application(s) • Load/ System Switch • D...


International Rectifier

IRLML0040TRPBF

File Download Download IRLML0040TRPBF Datasheet


Description
VDSS VGS Max RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 56 78 Application(s) Load/ System Switch DC Motor Drive V V mΩ mΩ PD - 96309A IRLML0040TRPbF HEXFET® Power MOSFET G1 S2 3D Micro3TM (SOT-23) IRLML0040TRPbF Features and Benefits Features Low RDS(on) ( ≤ 56mΩ) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Benefits Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation VGS TJ, TSTG Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol Parameter eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s) Max. 40 3.6 2.9 15 1.3 0.8 0.01 ± 16 -55 to + 150 Typ. ––– ––– Max. 100 99 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through „ are on page 10 www.irf.com Units V A W W/°C V °C Units °C/W 1 02/29/12 IRLML0040TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)