HEXFET Power MOSFET
VDSS
VGS Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
40 ± 16 56
78
Application(s)
• Load/ System Switch • D...
Description
VDSS
VGS Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
40 ± 16 56
78
Application(s)
Load/ System Switch DC Motor Drive
V V mΩ
mΩ
PD - 96309A
IRLML0040TRPbF
HEXFET® Power MOSFET
G1 S2
3D
Micro3TM (SOT-23) IRLML0040TRPbF
Features and Benefits Features
Low RDS(on) ( ≤ 56mΩ)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification
Benefits
Lower switching losses Multi-vendor compatibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
VGS TJ, TSTG
Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s)
Max.
40 3.6 2.9 15 1.3 0.8 0.01 ± 16 -55 to + 150
Typ.
––– –––
Max.
100 99
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
www.irf.com
Units
V A
W W/°C
V °C
Units
°C/W
1
02/29/12
IRLML0040TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(...
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