IRLML0100TRPBF

www.DataSheet4U.com PD - 97157 IRLML0100TRPbF VDS VGS Max RDS(on) max (@VGS = 10V) HEXFET® Power MOSFET 100 ± 16 220 235 V V m m G 1 3 D S 2 : : RDS(on) max (@VGS = 4.5V) Micro3TM (SOT-23) IRLML0100TRPbF Application(s) Load/ System Switch Features and Benefits Features Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1 results in ⇒ Benefits Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability Absolute Maximum Ratings Symbol VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 100 1.6 1.3 7.0 1.3 0.8 0.01 ± 16 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Symbol RθJA RθJA Parameter Junction-to-Ambient e Typ. ––– ––– Max. 100 99 Units °C/W Junction-to-Ambient (t<10s) f ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through „ are on page 10 www.irf.com 1 11/24/09 www.DataSheet4U.com IRLML0100TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 100 ––– ––– ––...