Document
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AUTOMOTIVE GRADE
PD - 96319
Features
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HEXFET® Power MOSFET
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AUIRF3805 AUIRF3805S AUIRF3805L
55V 2.6mΩ 210A c 3.3mΩ max.
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
V(BR)DSS RDS(on) typ.
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ID (Silicon Limited)
ID (Package Limited) 160A
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Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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TO-220AB AUIRF3805 G
D2Pak AUIRF3805S D
TO-262 AUIRF3805L S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS EAS (Tested ) IAR EAR TJ TSTG
Thermal Resistance
RθJC RθCS RθJA RθJA
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
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210 150 160 890 300 2.0 ± 20 650 940 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A W W/°C V mJ A mJ °C
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300 10 lbf in (1.1N m)
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Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount)
k i
Parameter
Typ.
––– 0.50 ––– –––
Max.
0.5 ––– 62 40
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Units
°C/W
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
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07/20/10
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AUIRF3805/S/L
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 ––– ––– 2.0 75 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.051 2.6 ––– ––– ––– ––– ––– ––– 190 52 72 150 20 93 87 4.5 7.5 7960 1260 630 4400 980 1550 ––– ––– 3.3 4.0 ––– 20 250 200 -200 290 ––– ––– ––– ––– ––– ––– ––– nH ––– ––– ––– ––– ––– ––– –––
Conditions
V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 75A ** V VDS = VGS, ID = 250µA V VDS = 25V, ID = 75A ** VDS = 55V, VGS = 0V µA VDS = 55V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V
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Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. nC ID = 75A ** VDS = 44V VGS = 10V VDD = 28V ID = 75A** RG = 2.6 Ω VGS = 10V Between lead,
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ns
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6mm (0.25in.) from package
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pF
S and center of die contact VGS = 0V VDS = 25V ƒ = 1.0MHz VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 44V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 44V
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Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton
Note
Min. Typ. Max. Units
––– ––– ––– ––– ––– ––– ––– ––– 36 47 210
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
through ,,
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 75A** , VGS = 0V TJ = 25°C, IF = 75A** , VDD = 28V di/dt = 100A/µs
A V ns nC
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890 1.3 54 71
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In.