HEXFET Power MOSFET
www.DataSheet4U.com
PD - 97542
AUTOMOTIVE GRADE
Features
● ● ● ● ●
AUIRF3205Z AUIRF3205ZS
HEXFET® Power MOSFET
D
● ●...
Description
www.DataSheet4U.com
PD - 97542
AUTOMOTIVE GRADE
Features
● ● ● ● ●
AUIRF3205Z AUIRF3205ZS
HEXFET® Power MOSFET
D
● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
V(BR)DSS RDS(on) max. ID (Silicon Limited)
55V 6.5mΩ 110A 75A
G S
ID (Package Limited)
D
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
G
D
S G
D
S
TO-220AB AUIRF3205Z
D2Pak AUIRF3205ZS
Absolute Maximum Ratings
G Gate
D Drain
S Source
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperat...
Similar Datasheet