HEXFET Power MOSFET
AUTOMOTIVE GRADE
PD - 96324 www.DataSheet4U.com
AUIRFS4310 AUIRFSL4310
Features
l l l l l l l
Advanced Process Techno...
Description
AUTOMOTIVE GRADE
PD - 96324 www.DataSheet4U.com
AUIRFS4310 AUIRFSL4310
Features
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
D
V(BR)DSS
100V 5.6mΩ
130A c 75A
RDS(on) typ.
G S
max.
ID (Silicon Limited) ID (Package Limited)
7.0mΩ
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S D G
D2Pak AUIRFS4310
G D
S D G
TO-262 AUIRFSL4310
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient tempe...
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