N-Channel Power MOSFET
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STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 Ω, 21 A D2PAK, TO-220, TO-220F...
Description
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STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 Ω, 21 A D2PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET
Features
Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N
■ ■ ■
VDSS (@Tjmax)
RDS(on) max
ID
3 1 2
3 1 2
TO-220FP
550 V < 0.158 Ω 21 A
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1
3
1
2
3
D²PAK
TO-247
Application
Switching applications Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Table 1.
Device summary
Marking Package D²PAK TO-220FP 28NM50N TO-220 TO-247 Tube Packaging Tape and reel
Order codes STB28NM50N STF28NM50N STP28NM50N STW28NM50N
July 2010
Doc ID 17432 Rev 1
1/18
www.st.com 18
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Contents
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
3 4 5 6
Test circuits
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