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MMBT8050C

SEMTECH ELECTRONICS

(MMBT8050C/D) NPN Silicon Epitaxial Planar Transistor

MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary...


SEMTECH ELECTRONICS

MMBT8050C

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Description
MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550C and MMBT8550D are recommended. www.DataSheet4U.com SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 OC) Symbol Value 25 40 6 600 200 150 -55 to +150 Unit V V V mA mW O Collector Emitter Voltage C o ll e ct o r B as e V o lt a g e Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCEO VCBO VEBO IC Ptot Tj TS C C O РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru MMBT8050C / MMBT8050D Characteristics at Ta =25 OC Symbol DC Current Gain at VCE=1V, IC=100mA at VCE=1V, IC=500mA Collector Cutoff Current at VCB=35V Collector Saturation Voltage at IC=500mA, IB=50mA Base Saturation Voltage at IC=500mA, IB=50mA Collector Emitter Breakdown Voltage at IC=2mA Collector Base Breakdown Voltage at IC=10µA Emitter Base Breakdown Voltage at IE=100µA Gain Bandwidth Product at VCE=5V, IC=10mA, f=50MHz Collector Base Capacitance at VCB=10V, f=1MHz Thermal Resistance Junction to Ambient CCBO RthA 12 fT 100 V(BR)EBO 6 V(BR)CBO 40 V(BR)CEO 25 VBE(sat) VCE(sat) MMBT8050C MMBT8050D hFE hFE hFE ICBO 100 160 40 Min. Typ. www.DataSheet4U.com Max. 250 400 100 0.5 1.2 200 Unit nA V V V V V MHz pF K/W SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, ...




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