M36L0T8060B1

www.DataSheet4U.com M36L0T8060T1 M36L0T8060B1 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory and 64 Mbit PSRAM, 1.8 V core, 3 V I/O supply, multichip package Features Multichip package ■ 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory 1 die of 64 Mbit (4 Mb ×16) Pseudo SRAM Supply voltage – VDDF = 1.7 V to 1.95 V – VDDQF = VCCP = 2.7 V to 3.1 V – VPPF = 9 V for fast program Electronic signature – Manufacturer code: 20h – Top device code M36L0T8060T1: 880Dh – Bottom device code M36L0T8060B1: 880Eh Package – ECOPACK® FBGA ■ ■ TFBGA88 (ZAQ) 8 x 10 mm ■ ■ Security – 64 bit unique device number – 2112 bit user programmable OTP cells Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WPF for block lock-down – Absolute write protection with VPPF = VSS Common Flash interface (CFI) ■ ■ Flash memory ■ Synchronous/asynchronous read – Synchronous burst read mode: 52 MHz – Asynchronous page read mode – Random access: 85 ns Synchronous burst read suspend Programming time – 5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple bank memory array: 16 Mbit banks – Parameter blocks (top or bottom location) Dual operations – Program/erase in one bank while read in others – No delay between read and write operations 100 000 program/erase cycles per block ■ PSRAM ■ ■ ■ ■ ■ ■ ■ ■ Access time: 65 ns Low standby current: 90 µA...