www.DataSheet4U.com
SP8M4
Transistors
Switching
SP8M4
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode...
www.DataSheet4U.com
SP8M4
Transistors
Switching
SP8M4
zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). zApplication Power switching, DC / DC converter. zExternal dimensions (Unit : mm)
SOP8
(8)
5.0±0.2
(5)
6.0±0.3 3.9±0.15
1.5±0.1 0.15
1.27
0.4±0.1 0.1 Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD.
zEquivalent circuit
Limits Nchannel Pchannel 30 −30 20 −20 ±9.0 ±7.0 ±36 ±28 1.6 −1.6 36 −28 2 150 −55 to +150 Unit V V A A A A W °C °C
(8) (7)
(6) (5)
Max.1.75
0.5±0.1
(1) (4)
0.2±0.1
Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg
(8) (7) (6) (5)
Continuous Pulsed Continuous Pulsed
∗1 ∗1 ∗2
∗2
∗2
(1) (2) (3) (4)
(1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain
∗1
∗1
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
zThermal resistance (Ta=25°C)
Parameter Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol Rth (ch-a)
Limits 62.5
Unit °C / W
...