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N08M1618L1A Dataheets PDF



Part Number N08M1618L1A
Manufacturers AMI SEMICONDUCTOR
Logo AMI SEMICONDUCTOR
Description 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K X 16 bit
Datasheet N08M1618L1A DatasheetN08M1618L1A Datasheet (PDF)

AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N08M1618L1A Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit Overview The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s .

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AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N08M1618L1A Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit Overview The N08M1618L1A is an integrated memory device intended for non life-support medical applications. This device is a 8 megabit memory organized as 524,288 words by 16 bits. The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology with reliability inhancements for medical users. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. This device is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in a JEDEC standard BGA package. Features • Dual voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.4 to 2.2 Volts • Very low standby current 0.5µA at 1.8V and 37 deg C • Very low operating current 1.0mA at 1.8V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.2V • Special Processing to reduce Soft Error Rate (SER) • Automatic power down to standby mode Product Family Part Number Package Type Operating Temperature Power Supply Speed Standby Operating Current (ISB), Current (Icc), Max Max N08M1618L1AB 48 - BGA 2.3V-3.6V(VCCQ) 85ns @ 1.7V -40oC to +85oC 1.4V-2.2V(V ) 150ns @ 1.4V CC 20 µA 2.5 mA @ 1MHz N08M1618L1AW Wafer Pin Configuration 1 A B C D E F G H LB I/O8 I/O9 VSS Pin Descriptions 3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS VCCQ NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Power I/O pins only Not Connected VCCQ I/O12 I/O14 I/O13 I/O15 A18 NC A8 48 Pin BGA (top) 8 x 10 mm Stock No. 23211-03 9/21/06 ADVANCE INFORMATION The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com. 1 AMI Semiconductor, Inc. Functional Block Diagram Address Inputs A0 - A3 Word Address Decode Logic N08M1618L1A Advance Information www.DataSheet4U.com Address Inputs A4 - A18 Page Address Decode Logic 32K Page x 16 word x 16 bit RAM Array Input/ Output Mux and Buffers Word Mux I/O0 - I/O7 I/O8 - I/O15 CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 H X X L L L CE2 X L X H H H WE X X X L H H OE X X X X3 L H UB X X H L1 L1 L1 LB X X H L1 L1 L1 I/O0 - I/O151 High Z High Z High Z Data In Data Out High Z MODE Standby2 Standby2 Standby2 Write3 Read Active POWER Standby Standby Standby Active -> Standby4 Active -> Standby4 Standby4 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. 4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from any expernal influence. Capacitance1 Item Input Capacitance I/O Capacitance Symbol CIN CI/O Test Condition VIN = 0V, f = 1 MHz, TA = 25oC VIN = 0V, f = 1 MHz, TA = 25oC Min Max 8 8 Unit pF pF 1. These parameters are verified in device characterization and are not 100% tested Stock No. 23211-03 9/21/06 ADVANCE INFORMATION The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com. 2 AMI Semiconductor, Inc. Absolute Maximum Ratings1 Item Voltage on any pin relative to VSS Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time Symbol VIN,OUT VCC PD TSTG TA TSOLDER N08M1618L1A Advance Information www.DataSheet4U.com Rating –0.3 to VCC+0.3 –0.3 to 4.5 500 –40 to 125 -40 to +85 240oC, 10sec(Lead only) Unit V V mW o C oC oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at the.


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