10EDB10

www.DataSheet4U.com DIODE FEATURES Type : 10EDB10 1A 100V Tj =150 °C OUTLINE DRAWING * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight:0.17g 10EDB10 100 50Hz Half Sine Wave Resistive Load Ta=39°C *1 Ta=26°C *2 1.0 0.9 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 45 Unit V A A A °C °C Electrical Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Symbol IRM VFM Conditions Min. Typ. Max. 10 1.0 110 140 Unit µA V °C/W Tj= 25°C, VRM= VRRM Tj= 25°C, IFM= 1.0A Junction to P.C. Board mounted*1 Thermal Resistance Rth(j-a) Ambient Without Fin *2 *1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides) *2: Without Fin or P.C. Board mounted www.DataSheet4U.com 10EDB OUTLINE DRAWING (Dmensions in mm) www.DataSheet4U.com FORWARD CURRENT VS. VOLTAGE 10 10EDB10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 0.2 0.1 0 0.4 0.8 1.2 1.6 INSTANTANEOUS FORWARD VOLTAGE (V) AVERAGE FORWARD POWER DISSIPATION 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 HALF SINE WAVE 10EDB10 D.C. AVERAGE FORWARD POWER DISSIPATION (W) 0 0.4 0.8 1.2 1.6 AVERAGE FORWARD CURRENT...